? semiconductor components industries, llc, 2002 june, 2002 rev. 10 1 publication order number: mj15003/d mj15003 (npn), mj15004 (pnp) preferred device complementary silicon power transistors the mj15003 and mj15004 are powerbase power transistors designed for high power audio, disk head positioners and other linear applications. ? high safe operating area (100% tested) 5.0 a @ 50 v ? for low distortion complementary designs ? high dc current gain h fe = 25 (min) @ i c = 5 adc ???????????????????? ???????????????????? maximum ratings ???????????? ???????????? rating ???? ???? symbol ???? ???? value ??? ??? unit ???????????? ???????????? collectoremitter voltage ???? ???? v ceo ???? ???? 140 ??? ??? vdc ???????????? ???????????? collectorbase voltage ???? ???? v cbo ???? ???? 140 ??? ??? vdc ???????????? ???????????? emitterbase voltage ???? ???? v ebo ???? ???? 5 ??? ??? vdc ???????????? ???????????? collector current continuous ???? ???? i c ???? ???? 20 ??? ??? adc ???????????? ???????????? base current continuous ???? ???? i b ???? ???? 5 ??? ??? adc ???????????? ???????????? emitter current continuous ???? ???? i e ???? ???? 25 ??? ??? adc ???????????? ???????????? total power dissipation @ t c = 25 c derate above 25 c ???? ???? p d ???? ???? 250 1.43 ??? ??? watts w/ c ???????????? ? ?????????? ? ???????????? operating and storage junction temperature range ???? ? ?? ? ???? t j , t stg ???? ? ?? ? ???? 65 to +200 ??? ? ? ? ??? c ???????????????????? ???????????????????? thermal characteristics ???????????? ???????????? characteristic ???? ???? symbol ???? ???? max ??? ??? unit ???????????? ???????????? thermal resistance, junctiontocase ???? ???? r jc ???? ???? 0.70 ??? ??? c/w ???????????? ? ?????????? ? ???????????? maximum lead temperature for soldering purposes: 1/16 from case for 10 seconds ???? ? ?? ? ???? t l ???? ? ?? ? ???? 265 ??? ? ? ? ??? c http://onsemi.com preferred devices are recommended choices for future use and best overall value. device package shipping ordering information mj15003 to204aa (to3) 100 foams mj15004 to204aa (to3) to204aa (to3) case 107 100 foams 20 ampere power transistors complementary silicon 140 v 250 w marking diagram xx = specific device code a = assembly location wl, l = wafer lot yy, y = year ww, w = work week xxxxx yyww
mj15003 (npn), mj15004 (pnp) http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? *electrical characteristics (t c = 25 c unless otherwise noted) ??????????????????????? ??????????????????????? characteristic ???? ???? symbol ???? ???? min ??? ??? max ??? ??? unit ????????????????????????????????? ????????????????????????????????? off characteristics ??????????????????????? ? ????????????????????? ? ??????????????????????? collector emitter sustaining voltage (note 1) (i c = 200 madc, i b = 0) ???? ? ?? ? ???? v ceo(sus) ???? ? ?? ? ???? 140 ??? ? ? ? ??? ??? ? ? ? ??? vdc ??????????????????????? ? ????????????????????? ? ??????????????????????? collector cutoff current (v ce = 140 vdc, v be(off) = 1.5 vdc) (v ce = 140 vdc, v be(off) = 1.5 vdc, t c = 150 c) ???? ? ?? ? ???? i cex ???? ? ?? ? ???? ??? ? ? ? ??? 100 2 ??? ? ? ? ??? adc madc ??????????????????????? ? ????????????????????? ? ??????????????????????? collector cutoff current (v ce = 140 vdc, i b = 0) ???? ? ?? ? ???? i ceo ???? ? ?? ? ???? ??? ? ? ? ??? 250 ??? ? ? ? ??? adc ??????????????????????? ??????????????????????? emitter cutoff current (v eb = 5 vdc, i c = 0) ???? ???? i ebo ???? ???? ??? ??? 100 ??? ??? adc ????????????????????????????????? ????????????????????????????????? second breakdown ??????????????????????? ? ????????????????????? ? ? ????????????????????? ? ??????????????????????? second breakdown collector current with base forward baised (v ce = 50 vdc, t = 1 s (non repetitive)) (v ce = 100 vdc, t = 1 s (non repetitive)) ???? ? ?? ? ? ?? ? ???? i s/b ???? ? ?? ? ? ?? ? ???? 5.0 1.0 ??? ? ? ? ? ? ? ??? ??? ? ? ? ? ? ? ??? adc ????????????????????????????????? ????????????????????????????????? on characteristics ??????????????????????? ??????????????????????? dc current gain (i c = 5 adc, v ce = 2 vdc) ???? ???? h fe ???? ???? 25 ??? ??? 150 ??? ??? ??????????????????????? ? ????????????????????? ? ??????????????????????? collector emitter saturation voltage (i c = 5 adc, i b = 0.5 adc) ???? ? ?? ? ???? v ce(sat) ???? ? ?? ? ???? ??? ? ? ? ??? 1.0 ??? ? ? ? ??? vdc ??????????????????????? ??????????????????????? base emitter on voltage (i c = 5 adc, v ce = 2 vdc) ???? ???? v be(on) ???? ???? ??? ??? 2.0 ??? ??? vdc ????????????????????????????????? ????????????????????????????????? dynamic characteristics ??????????????????????? ? ????????????????????? ? ??????????????????????? current gain e bandwidth product (i c = 0.5 adc, v ce = 10 vdc, f test = 0.5 mhz) ???? ? ?? ? ???? f t ???? ? ?? ? ???? 2.0 ??? ? ? ? ??? ??? ? ? ? ??? mhz ??????????????????????? ? ????????????????????? ? ??????????????????????? output capacitance (v cb = 10 vdc, i e = 0, f test = 1 mhz) ???? ? ?? ? ???? c ob ???? ? ?? ? ???? ??? ? ? ? ??? 1000 ??? ? ? ? ??? pf 1. pulse test: pulse width = 300 s, duty cycle 2%. i c , collector current (amp) 5 figure 1. activeregion safe operating area v ce , collector-emitter voltage (volts) 5 7 10 200 10 2 2 3 50 70 100 20 30 7 20 1 3 0.5 0.2 0.7 0.3 t c = 25 c 15 150 t j = 200 c bonding wire limited thermal limitation (single pulse) second breakdown limited curves apply below rated v ceo there are two limitations on the powerhandling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 1 is based on t j(pk) = 200 c; t c is variable depending on conditions. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
mj15003 (npn), mj15004 (pnp) http://onsemi.com 3 package dimensions case 107 to204aa (to3) issue z notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. all rules and notes associated with referenced to-204aa outline shall apply. style 1: pin 1. base 2. emitter case: collector dim min max min max millimeters inches a 1.550 ref 39.37 ref b --- 1.050 --- 26.67 c 0.250 0.335 6.35 8.51 d 0.038 0.043 0.97 1.09 e 0.055 0.070 1.40 1.77 g 0.430 bsc 10.92 bsc h 0.215 bsc 5.46 bsc k 0.440 0.480 11.18 12.19 l 0.665 bsc 16.89 bsc n --- 0.830 --- 21.08 q 0.151 0.165 3.84 4.19 u 1.187 bsc 30.15 bsc v 0.131 0.188 3.33 4.77 a n e c k t seating plane 2 pl d m q m 0.13 (0.005) y m t m y m 0.13 (0.005) t q y 2 1 u l g b v h
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